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dc.contributor.author莊紹勳en_US
dc.contributor.author謝易叡en_US
dc.date.accessioned2014-12-16T06:13:50Z-
dc.date.available2014-12-16T06:13:50Z-
dc.date.issued2014-01-11en_US
dc.identifier.govdocH01L027/092zh_TW
dc.identifier.govdocH01L021/8238zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104364-
dc.description.abstract本發明提出一種使用無源極、汲極接面之場效電晶體之基本互補式邏輯閘之構造及其製造方法,於半導體晶圓(wafer)上,形成無源極和汲極接面之N通道電晶體及無源極和汲極接面之P通道電晶體,在電晶體間以導電之連接結構互相連接,形成基本互補式邏輯閘(如inverter,NAND,NOR等邏輯閘)。zh_TW
dc.language.isozh_TWen_US
dc.title使用無源極和汲極接面場效電晶體之基本互補式邏輯閘之構造及其製造方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI423426zh_TW
Appears in Collections:Patents


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