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dc.contributor.authorZan Hsiao-Wenen_US
dc.contributor.authorMeng Hsin-Feien_US
dc.contributor.authorTsai Wu-Weien_US
dc.contributor.authorChao Yu-Chiangen_US
dc.date.accessioned2014-12-16T06:13:51Z-
dc.date.available2014-12-16T06:13:51Z-
dc.date.issued2014-05-13en_US
dc.identifier.govdocH01L051/52zh_TW
dc.identifier.govdocH01L051/56zh_TW
dc.identifier.govdocH01L051/44zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104382-
dc.description.abstractA vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.zh_TW
dc.language.isozh_TWen_US
dc.titleVertical electro-optical component and method of fabricating the samezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08723165zh_TW
Appears in Collections:Patents


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