標題: | High-gain complementary inverter with ambipolar thin film transistors and fabrication thereof |
作者: | Liu Po-Tsun Chou Yi-Teh Teng Li-Feng Fu Chur-Shyang Shieh Han-Ping |
公開日期: | 22-Oct-2013 |
摘要: | The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction. |
官方說明文件#: | H01L029/10 |
URI: | http://hdl.handle.net/11536/104430 |
專利國: | USA |
專利號碼: | 08563974 |
Appears in Collections: | Patents |
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