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dc.contributor.authorLee Wei-Ien_US
dc.contributor.authorHsu Ying-Chiaen_US
dc.contributor.authorYeh Yen-Hsienen_US
dc.contributor.authorChen Kuei-Mingen_US
dc.date.accessioned2014-12-16T06:13:58Z-
dc.date.available2014-12-16T06:13:58Z-
dc.date.issued2013-10-22en_US
dc.identifier.govdocH01L021/302zh_TW
dc.identifier.govdocH01L021/461zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104434-
dc.description.abstractThe invention discloses a treating method to produce various patterns on the surface by using gases with ability to etch the group III nitride semiconductor in certain conditions. The selective etching makes some specific patterns on group III nitride semiconductor surface, and different forms of the patterns can be controlled by the selective etching conditions.zh_TW
dc.language.isozh_TWen_US
dc.titleMethod for treating group III nitride semiconductorzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08563437zh_TW
Appears in Collections:Patents


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