Method for treating group III nitride semiconductor

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee Wei-I	en_US
dc.contributor.author	Hsu Ying-Chia	en_US
dc.contributor.author	Yeh Yen-Hsien	en_US
dc.contributor.author	Chen Kuei-Ming	en_US
dc.date.accessioned	2014-12-16T06:13:58Z	-
dc.date.available	2014-12-16T06:13:58Z	-
dc.date.issued	2013-10-22	en_US
dc.identifier.govdoc	H01L021/302	zh_TW
dc.identifier.govdoc	H01L021/461	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104434	-
dc.description.abstract	The invention discloses a treating method to produce various patterns on the surface by using gases with ability to etch the group III nitride semiconductor in certain conditions. The selective etching makes some specific patterns on group III nitride semiconductor surface, and different forms of the patterns can be controlled by the selective etching conditions.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Method for treating group III nitride semiconductor	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	08563437	zh_TW
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