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dc.contributor.authorLo, Hsiang-Yuen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorChao, Hsueh-Yungen_US
dc.contributor.authorTsai, Chih-Haoen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.date.accessioned2014-12-08T15:13:31Z-
dc.date.available2014-12-08T15:13:31Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0607-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/10444-
dc.description.abstractIn this work, we explore the effect of process variation on field emission characteristics in surface conduction electron-emitters. The structure of palladium thin-film emitter is fabricated on the substrate and the nanometer scaled gap is formed by the focused ion beam (FIB) technique. Different shapes of nanogaps due to the process variations are investigated by the experiment and 3D Maxwell particle-in-cell simulation. Four deformation structures are examined, and it is found that the Type 1 exhibits high emission efficiency due to a stronger electric field around the apex and larger the emission current among structures. The electron emission current is dependent upon the angle of inclination of surface.en_US
dc.language.isoen_USen_US
dc.subjectprocess variationen_US
dc.subjectsurface conduction electron emitteren_US
dc.subjectpalladiumen_US
dc.subjectfocused ion beamen_US
dc.subjectparticle-in-cell simulationen_US
dc.titleEffect of Process Variation on Field Emission Characteristic in Surface Conduction Electron-Emittersen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3en_US
dc.citation.spage353en_US
dc.citation.epage356en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000261434900080-
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