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dc.contributor.authorLee Wei-Ien_US
dc.contributor.authorYeh Yen-Hsienen_US
dc.contributor.authorWu Yin-Haoen_US
dc.contributor.authorYu Tzu-Yien_US
dc.date.accessioned2014-12-16T06:14:02Z-
dc.date.available2014-12-16T06:14:02Z-
dc.date.issued2013-04-16en_US
dc.identifier.govdocH01L021/302zh_TW
dc.identifier.govdocH01L021/36zh_TW
dc.identifier.govdocH01L021/331zh_TW
dc.identifier.govdocH01L021/461zh_TW
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104490-
dc.description.abstractA method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device.zh_TW
dc.language.isozh_TWen_US
dc.titleMethod for treating the dislocation in a GaN-containing semiconductor layerzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08420543zh_TW
Appears in Collections:Patents


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