標題: | Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layers |
作者: | Lin, CF Cheng, HC Feng, MS Chi, GC 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | GaN;epitaxial layers;AlxGa1-xN buffer layers;6H-SiC substrates |
公開日期: | 18-十二月-1997 |
摘要: | High quality GaN epitaxial layers were obtained with AlxGa1-xN buffer layers on 6H-SiC substrates. The low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method was used. The 500 Angstrom thick buffer layers of AlxGa1-xN (0 less than or equal to x less than or equal to 1) were deposited on SiC substrates at 1025 degrees C. The FWHM of GaN (0004) X-ray curves are 2-3 arcmin, which vary with the Al content in AlxGa1-xN buffer layers. An optimum Al content is found to be 0.18. The best GaN epitaxial film has the mobility and carrier concentration about 564 cm(2) V-1 s(-1) and 1.6 x 10(17) cm(-3) at 300 K. The splitting diffraction angle between GaN and AlxGa1-xN were also analyzed from X-ray diffraction curves. (C) 1997 Elsevier Science S.A. |
URI: | http://hdl.handle.net/11536/141 |
ISSN: | 0921-5107 |
期刊: | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY |
Volume: | 50 |
Issue: | 1-3 |
起始頁: | 25 |
結束頁: | 28 |
顯示於類別: | 期刊論文 |