Method for treating the dislocation in a GaN-containing semiconductor layer

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee Wei-I	en_US
dc.contributor.author	Yeh Yen-Hsien	en_US
dc.contributor.author	Wu Yin-Hao	en_US
dc.contributor.author	Yu Tzu-Yi	en_US
dc.date.accessioned	2014-12-16T06:14:02Z	-
dc.date.available	2014-12-16T06:14:02Z	-
dc.date.issued	2013-04-16	en_US
dc.identifier.govdoc	H01L021/302	zh_TW
dc.identifier.govdoc	H01L021/36	zh_TW
dc.identifier.govdoc	H01L021/331	zh_TW
dc.identifier.govdoc	H01L021/461	zh_TW
dc.identifier.govdoc	H01L021/20	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104490	-
dc.description.abstract	A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Method for treating the dislocation in a GaN-containing semiconductor layer	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	08420543	zh_TW
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