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dc.contributor.authorChuang Ching-Teen_US
dc.contributor.authorYang Hao-Ien_US
dc.contributor.authorHsia Mao-Chihen_US
dc.contributor.authorLin Yung-Weien_US
dc.contributor.authorLu Chien-Yuen_US
dc.contributor.authorTu Ming-Hsienen_US
dc.contributor.authorHwang Weien_US
dc.contributor.authorJou Shyh-Jyeen_US
dc.contributor.authorChen Chia-Chengen_US
dc.contributor.authorShih Wei-Chiangen_US
dc.date.accessioned2014-12-16T06:14:08Z-
dc.date.available2014-12-16T06:14:08Z-
dc.date.issued2012-11-27en_US
dc.identifier.govdocG11C007/00zh_TW
dc.identifier.govdocG11C007/22zh_TW
dc.identifier.govdocG11C005/14zh_TW
dc.identifier.govdocG11C011/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104528-
dc.description.abstractA static random access memory with data controlled power supply, which comprises a memory cell circuit and at least one Write-assist circuit, for providing power to the memory cell circuit according to data to be written to the memory cell circuit.zh_TW
dc.language.isozh_TWen_US
dc.titleStatic random access memory with data controlled power supplyzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08320164zh_TW
Appears in Collections:Patents


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