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dc.contributor.authorHan, Ming-Hungen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorHwang, Chih-Hongen_US
dc.date.accessioned2014-12-08T15:13:32Z-
dc.date.available2014-12-08T15:13:32Z-
dc.date.issued2010-05-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2010.01.048en_US
dc.identifier.urihttp://hdl.handle.net/11536/10455-
dc.description.abstractThis work estimates the influences of the intrinsic parameter fluctuations consisting of metal gate work-function fluctuation (WKF), process variation effect (PVE) and random dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field effect transistors (MOSFETs) and circuits by using an experimentally validated three-dimensional device and coupled device-circuit simulations. The dominance fluctuation source in threshold voltage, gate capacitance, cut-off frequency, high-frequency gain, 3 dB bandwidth, unity-gain bandwidth, power, and the power-added efficiency has been found. Similar to the trend of the cut-off frequency, the PVE and RDF dominate both the device and circuits characteristic fluctuations due to the significant gate capacitance fluctuations and the WKF is less important at this simulation scenario. (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleThe impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuiten_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.microrel.2010.01.048en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume50en_US
dc.citation.issue5en_US
dc.citation.spage657en_US
dc.citation.epage661en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000278728700019-
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