標題: Variation-tolerant word-line under-drive scheme for random access memory
作者: Chuang Ching-Te
Lin Yi-Wei
Chen Chia-Cheng
Shih Wei-Chiang
公開日期: 3-七月-2012
摘要: A Random Access Memory (RAM) is provided. The RAM includes a plurality of word-line drivers, at least a first tracking transistor and a second tracking transistor. Each word-line driver has an input node receiving a decoding signal, a power node receiving an operation voltage and a driving node driving a word-line. In an embodiment, the first tracking transistor has two channel terminal nodes respectively coupled to the driving node of one of the word-line driver and a channel terminal node of the second tracking transistor; wherein the first tracking transistor has electronic characteristics tracking those of a driving transistor of word-line driver, and the second tracking transistor has electronic characteristics tracking those of pass-gate transistor(s) in each cell of the RAM.
官方說明文件#: G11C007/10
G11C008/00
URI: http://hdl.handle.net/11536/104571
專利國: USA
專利號碼: 08213257
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