標題: Schmitt trigger-based finFET SRAM cell
作者: Chuang Ching-Te
Hsieh Chien-Yu
Fan Ming-Long
Hu Pi-Ho
Su Pin
公開日期: 1-五月-2012
摘要: The present invention provides a Schmitt trigger-based FinFET static random access memory (SRAM) cell, which is an 8-FinFET structure. A FinFET has the functions of two independent gates. The new SRAM cell uses only 8 FinFET per cell, compared with the 10-FinFET structure in previous works. As a result, the cell structure of the present invention can save chip area and raise chip density. Furthermore, this new SRAM cell can effectively solve the conventional problem that the 6T SRAM cell is likely to have read errors at a low operating voltage.
官方說明文件#: G11C011/00
URI: http://hdl.handle.net/11536/104584
專利國: USA
專利號碼: 08169814
顯示於類別:專利資料


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