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dc.contributor.authorChang Chia-Huaen_US
dc.contributor.authorYang Chin-Shengen_US
dc.contributor.authorChiu Ching-Huaen_US
dc.contributor.authorYu Pei-Chenen_US
dc.contributor.authorKuo Hao-Chungen_US
dc.date.accessioned2014-12-16T06:14:18Z-
dc.date.available2014-12-16T06:14:18Z-
dc.date.issued2011-08-16en_US
dc.identifier.govdocB05D003/00zh_TW
dc.identifier.govdocB05D005/06zh_TW
dc.identifier.govdocB05D003/02zh_TW
dc.identifier.govdocC23C014/14zh_TW
dc.identifier.govdocC23C014/30zh_TW
dc.identifier.govdocH05B007/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104645-
dc.description.abstractA method of forming thin-film structure by oblique-angle deposition is provided. The method includes the steps of: evaporating target source in a chamber by an electron beam evaporation system, and introducing process gas into the chamber and adjusting tilt angle of the evaporation substrate and controlling temperature in the chamber during evaporation to form thin-film on a evaporation substrate by oblique-angle deposition, and then annealing the evaporation substrate to form a thin-film having porous nanorod microstructure.zh_TW
dc.language.isozh_TWen_US
dc.titleMethod of forming thin-film structure by oblique-angle depositionzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07998539zh_TW
Appears in Collections:Patents


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