完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee Wei-I | en_US |
dc.contributor.author | Chen Jenn-Fang | en_US |
dc.contributor.author | Chiang Chen-Hao | en_US |
dc.date.accessioned | 2014-12-16T06:14:18Z | - |
dc.date.available | 2014-12-16T06:14:18Z | - |
dc.date.issued | 2011-07-19 | en_US |
dc.identifier.govdoc | H01L031/06 | zh_TW |
dc.identifier.govdoc | H01L021/20 | zh_TW |
dc.identifier.govdoc | H01L021/36 | zh_TW |
dc.identifier.govdoc | H01L021/00 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104648 | - |
dc.description.abstract | A manufacture method of a multilayer structure having a non-polar a-plane {11-22} III-nitride layer includes forming a nucleation layer on a r-plane substrate, wherein the nucleation layer is composed of multiple nitride layers; and forming a non-polar a-plane {11-20} III-nitride layer on the nucleation layer. The nucleation layer features reduced stress, reduced phase difference of lattice, blocked elongation of dislocation, and reduced density of dislocation. Thus, the non-polar a-plane {11-20} III-nitride layer with flat surface can be formed. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | Manufacture method of a multilayer structure having non-polar a-plane {11-20} III-nitride layer | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 07981711 | zh_TW |
顯示於類別: | 專利資料 |