標題: | Free-standing a-plane GaN substrates grown by HVPE |
作者: | Wu, Yin-Hao Yeh, Yen-Hsien Chen, Kuei-Ming Yang, Yu-Jen Lee, Wei-I 電子物理學系 Department of Electrophysics |
關鍵字: | Hydride vapor phase epitaxy;non-polar Gallium Nitride;Semiconducting III-V materials |
公開日期: | 2012 |
摘要: | A-plane free-standing GaN was grown on a-plane GaN templates by HVPE. A-plane GaN templates were grown on r-plane sapphire by MOCVD with multilayer high-low-high temperature AlN buffer layers. A regrowth method was used for growing GaN through HVPE. First, GaN was grown on a-plane GaN templates, followed by separating the a-plane GaN film from r-plane sapphire using LLO. Then, the GaN films were regrown using HVPE. The resulting free-standing GaN contained some voids, which causes to release the stress. |
URI: | http://hdl.handle.net/11536/15893 http://dx.doi.org/82621Z |
ISBN: | 978-0-8194-8905-0 |
ISSN: | 0277-786X |
DOI: | 82621Z |
期刊: | GALLIUM NITRIDE MATERIALS AND DEVICES VII |
Volume: | 8262 |
顯示於類別: | 會議論文 |