Light emitter device

標題:	Light emitter device
作者:	Chang Chun-Yen Yang Tsung Hsi
公開日期:	12-Jul-2011
摘要:	A light emitting device (LED) structure formed on a Group IV-based semiconductor substrate is provided. The LED structure includes a Group IV-based substrate, an AlN nucleation layer formed on the Group IV-based substrate, a GaN epitaxial layer formed on the AlN nucleation layer, a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, and an LED active layer formed on the DBR multi-layer structure.
官方說明文件#:	H01L029/26 H01L031/12 H01L033/00 H01L029/18 H01L027/15 H01L029/267 H01L021/00
URI:	http://hdl.handle.net/11536/104652
專利國:	USA
專利號碼:	07977687
Appears in Collections:	Patents

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