Organic photosensitive optoelectronic device

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DC Field	Value	Language
dc.contributor.author	Meng Hsin-Fei	en_US
dc.contributor.author	Hong Sheng-Fu	en_US
dc.contributor.author	Tseng Hsin-Rong	en_US
dc.contributor.author	Chen En-Chen	en_US
dc.contributor.author	Chu Chia-Hung	en_US
dc.date.accessioned	2014-12-16T06:14:19Z	-
dc.date.available	2014-12-16T06:14:19Z	-
dc.date.issued	2011-06-28	en_US
dc.identifier.govdoc	H01L029/08	zh_TW
dc.identifier.govdoc	H01L035/24	zh_TW
dc.identifier.govdoc	H01L051/00	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104659	-
dc.description.abstract	An organic photosensitive optoelectronic device includes an anode, an organic photosensitive layer formed on the anode and having a donor portion and an acceptor portion, a hole blocking layer formed on the organic photosensitive layer so as for the organic photosensitive layer to be sandwiched between the anode and the hole blocking layer, and a cathode formed on the hole blocking layer so as for the hole blocking layer to be sandwiched between the cathode and the organic photosensitive layer. The highest occupied molecular orbitals (HOMO) of the hole blocking layer is at least 0.3 eV higher than that of the donor portion. Therefore, the optoelectronic device efficiently suppresses dark current so as to enhance sensitivity when applied to a detector.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Organic photosensitive optoelectronic device	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	07968875	zh_TW
Appears in Collections:	Patents

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