Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chao Chuen-Guang | en_US |
dc.contributor.author | Chen Jung-Hsuan | en_US |
dc.contributor.author | Yang Ta-Wei | en_US |
dc.date.accessioned | 2014-12-16T06:14:19Z | - |
dc.date.available | 2014-12-16T06:14:19Z | - |
dc.date.issued | 2011-06-14 | en_US |
dc.identifier.govdoc | H01L021/76 | zh_TW |
dc.identifier.govdoc | H01L021/44 | zh_TW |
dc.identifier.govdoc | H01L021/22 | zh_TW |
dc.identifier.govdoc | H01L021/38 | zh_TW |
dc.identifier.govdoc | H01L021/20 | zh_TW |
dc.identifier.govdoc | H01L021/36 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104661 | - |
dc.description.abstract | The present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | Method for fabricating nanoscale thermoelectric device | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 07960258 | zh_TW |
Appears in Collections: | Patents |
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