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dc.contributor.authorChao Chuen-Guangen_US
dc.contributor.authorChen Jung-Hsuanen_US
dc.contributor.authorYang Ta-Weien_US
dc.date.accessioned2014-12-16T06:14:19Z-
dc.date.available2014-12-16T06:14:19Z-
dc.date.issued2011-06-14en_US
dc.identifier.govdocH01L021/76zh_TW
dc.identifier.govdocH01L021/44zh_TW
dc.identifier.govdocH01L021/22zh_TW
dc.identifier.govdocH01L021/38zh_TW
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.govdocH01L021/36zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104661-
dc.description.abstractThe present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency.zh_TW
dc.language.isozh_TWen_US
dc.titleMethod for fabricating nanoscale thermoelectric devicezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07960258zh_TW
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