Structure of high electron mobility transistor, a device comprising the structure and a method of producing the same

Abstract

Disclosed herein are a structure of a metal oxide semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) suitable for use in a semiconductor device, such as a single-pole-double-throw (SPDT) switch of a monolithic microwave integrated circuit (MMIC); and a method of producing the same. The MOS-PHEMT structure is characterized in having a gate dielectric layer formed by atomic deposition from a gate dielectric selected from the group consisting of Al2O3, HfO2, La2O3, and ZrO2, and thereby rendering the semiconductor structure comprising the same, such as a high frequency switch device, to have less DC power loss, less insertion loss and better isolation.