標題: High electron mobility transistor and method for fabricating the same
作者: Chang Edward Yi
Kuo Chien-I
Hsu Heng-Tung
公開日期: 1-五月-2012
摘要: A high electron mobility transistor includes a substrate, a buffer layer, a channel layer, a spacer layer, a schottky layer and a cap layer. The buffer layer is formed on the substrate. The channel layer is formed on the buffer layer, in which the channel layer comprises a superlattice structure formed with a plurality of indium gallium arsenide thin films alternately stacked with a plurality of indium arsenide thin films. The spacer layer is formed on the channel layer. The schottky layer is formed on the spacer layer. The cap layer is formed on the schottky layer.
官方說明文件#: H01L021/338
H01L029/66
URI: http://hdl.handle.net/11536/104587
專利國: USA
專利號碼: 08169002
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