標題: | Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrate |
作者: | Luo, Guangli Chien, Chao-Hsin Yang, Tsung-Hsi Chang, Chun-Yen |
公開日期: | 6-九月-2007 |
摘要: | The present invention discloses an architecture of a NMOS transistor with a compressive strained Si—Ge channel fabricated on a silicon (110) substrate, which comprises: a p-silicon (110) substrate, two n+ ion-implanted regions functioning as the source and the drain respectively, a compressive strained Si—Ge channel layer, and a gate structure. The compressive strained Si—Ge channel layer is grown on the p-silicon (110) substrate to reduce the electron conductivity effective mass in the [1_l -10] crystallographic direction and to promote the electron mobility in the [1-10] crystallographic direction. Thus, the present invention can improve the electron mobility of a NMOS transistor via the channels fabricated on the silicon (110) substrate. Further, the NMOS transistor of the present invention can combine with a high-speed PMOS transistor on a silicon (110) substrate to form a high-performance CMOS transistor on the same silicon (110) substrate. |
官方說明文件#: | H01L029/76 |
URI: | http://hdl.handle.net/11536/105639 |
專利國: | USA |
專利號碼: | 20070205444 |
顯示於類別: | 專利資料 |