完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang | en_US |
dc.contributor.author | Edward Yi. | en_US |
dc.contributor.author | Wu | en_US |
dc.contributor.author | Yun-Chi | en_US |
dc.contributor.author | Lin | en_US |
dc.contributor.author | Yueh-Chin | en_US |
dc.date.accessioned | 2014-12-16T06:14:23Z | - |
dc.date.available | 2014-12-16T06:14:23Z | - |
dc.date.issued | 2010-11-09 | en_US |
dc.identifier.govdoc | H01L021/44 | zh_TW |
dc.identifier.govdoc | H01L021/28 | zh_TW |
dc.identifier.govdoc | H01L021/338 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104693 | - |
dc.description.abstract | Disclosed herein are a structure of a metal oxide semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) suitable for use in a semiconductor device, such as a single-pole-double-throw (SPDT) switch of a monolithic microwave integrated circuit (MMIC); and a method of producing the same. The MOS-PHEMT structure is characterized in having a gate dielectric layer formed by atomic deposition from a gate dielectric selected from the group consisting of Al2O3, HfO2, La2O3, and ZrO2, and thereby rendering the semiconductor structure comprising the same, such as a high frequency switch device, to have less DC power loss, less insertion loss and better isolation. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | Structure of high electron mobility transistor, a device comprising the structure and a method of producing the same | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 07829448 | zh_TW |
顯示於類別: | 專利資料 |