完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ker | en_US |
dc.contributor.author | Ming-Dou | en_US |
dc.contributor.author | Yen | en_US |
dc.contributor.author | Cheng-Cheng | en_US |
dc.contributor.author | Liao | en_US |
dc.contributor.author | Chi-Sheng | en_US |
dc.contributor.author | Chen | en_US |
dc.contributor.author | Tung-Yang | en_US |
dc.date.accessioned | 2014-12-16T06:14:25Z | - |
dc.date.available | 2014-12-16T06:14:25Z | - |
dc.date.issued | 2010-05-04 | en_US |
dc.identifier.govdoc | H02H009/00 | zh_TW |
dc.identifier.govdoc | H02H003/22 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104724 | - |
dc.description.abstract | A transient detection circuit including a detecting unit, a setting unit, and a memory unit. The transient detection circuit provides an information signal to an external instrument when an electrostatic discharge (ESD) event occurs. The detecting unit is coupled between a first power line and a second power line for detecting the ESD event. The setting unit sets a level of a first node according to the detection result. The memory unit controls the information signal according to the level of the first node. The information signal is at a first level when the ESD event occurs in the first power line. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | Transient detection circuit for ESD protection | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 07710696 | zh_TW |
顯示於類別: | 專利資料 |