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dc.contributor.authorTsengen_US
dc.contributor.authorTseung-Yuenen_US
dc.contributor.authorLeeen_US
dc.contributor.authorChia-Yingen_US
dc.contributor.authorLien_US
dc.contributor.authorSeu-Yien_US
dc.contributor.authorLinen_US
dc.contributor.authorPangen_US
dc.date.accessioned2014-12-16T06:14:25Z-
dc.date.available2014-12-16T06:14:25Z-
dc.date.issued2010-04-27en_US
dc.identifier.govdocH01J009/12zh_TW
dc.identifier.govdocH01J009/04zh_TW
dc.identifier.govdocH01J009/00zh_TW
dc.identifier.govdocH01J009/24zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104725-
dc.description.abstractThis invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.zh_TW
dc.language.isozh_TWen_US
dc.titleGate controlled field emission triode and process for fabricating the samezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07704114zh_TW
Appears in Collections:Patents


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