標題: Electrical characterizations of a controllable field emission triode based on low temperature synthesized ZnO nanowires
作者: Lee, CY
Tseng, TY
Li, SY
Lin, P
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 14-一月-2006
摘要: Fabrication and field emission properties of a ZnO nanowire (NW) triode were investigated in this study. The ZnO NWs have a single-crystalline wurtzite structure, similar to 50 nm diameter and 3.4 x 10(10) cm(-2) number density. The ZnO NW triode shows good and controllable emission properties with the turn-on anode electric field (at a current density of 1 mu A cm(-2)), threshold anode electric field (at a current density of 1 mA cm(-2)) and field enhancement factor of 1.6, 2.1 V mu m(-1) and 3340, respectively. The ZnO NW triode exhibits transistor characteristics with a gate leakage region, linear region and saturation region. Furthermore, the controllable field emission performance of the ZnO NW triode can be enhanced by illumination and argon ion bombardment. A low temperature Si-based microelectronic compatible fabrication process was provided for successfully making ZnO NW based triodes with good field emission properties.
URI: http://dx.doi.org/10.1088/0957-4484/17/1/014
http://hdl.handle.net/11536/12739
ISSN: 0957-4484
DOI: 10.1088/0957-4484/17/1/014
期刊: NANOTECHNOLOGY
Volume: 17
Issue: 1
起始頁: 83
結束頁: 88
顯示於類別:期刊論文


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