標題: | Electrical characterizations of a controllable field emission triode based on low temperature synthesized ZnO nanowires |
作者: | Lee, CY Tseng, TY Li, SY Lin, P 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 14-一月-2006 |
摘要: | Fabrication and field emission properties of a ZnO nanowire (NW) triode were investigated in this study. The ZnO NWs have a single-crystalline wurtzite structure, similar to 50 nm diameter and 3.4 x 10(10) cm(-2) number density. The ZnO NW triode shows good and controllable emission properties with the turn-on anode electric field (at a current density of 1 mu A cm(-2)), threshold anode electric field (at a current density of 1 mA cm(-2)) and field enhancement factor of 1.6, 2.1 V mu m(-1) and 3340, respectively. The ZnO NW triode exhibits transistor characteristics with a gate leakage region, linear region and saturation region. Furthermore, the controllable field emission performance of the ZnO NW triode can be enhanced by illumination and argon ion bombardment. A low temperature Si-based microelectronic compatible fabrication process was provided for successfully making ZnO NW based triodes with good field emission properties. |
URI: | http://dx.doi.org/10.1088/0957-4484/17/1/014 http://hdl.handle.net/11536/12739 |
ISSN: | 0957-4484 |
DOI: | 10.1088/0957-4484/17/1/014 |
期刊: | NANOTECHNOLOGY |
Volume: | 17 |
Issue: | 1 |
起始頁: | 83 |
結束頁: | 88 |
顯示於類別: | 期刊論文 |