標題: Vertical organic transistor
作者: Meng
Hsin-Fei
Horng
Sheng-Fu
Chao
Yu-Chiang
公開日期: 6-Apr-2010
摘要: A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.
官方說明文件#: H01L029/66
H01L029/08
H01L035/24
H01L051/00
H01L021/331
URI: http://hdl.handle.net/11536/104727
專利國: USA
專利號碼: 07692269
Appears in Collections:Patents


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