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dc.contributor.authorLuen_US
dc.contributor.authorTien-Changen_US
dc.contributor.authorChenen_US
dc.contributor.authorChyong-Huaen_US
dc.date.accessioned2014-12-16T06:14:28Z-
dc.date.available2014-12-16T06:14:28Z-
dc.date.issued2009-08-18en_US
dc.identifier.govdocH01S005/00zh_TW
dc.identifier.govdocH01S003/04zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104744-
dc.description.abstractA structure of high power edge emission laser diode that has plural mode extension sublayers with a chirp periodic distribution is provided. The Near Field Pattern (NFP) is an L shape, and the high intensity portion is nicely overlapped with the multi quantum wells. Furthermore, the low intensity portion will extend to the n-type cladding as it can as possible. Accordingly, the optical power density on the mirror surface of the high power edge emission laser diode is lower down and the vertical divergence angle is decreased, so as to prolong its lifetime.zh_TW
dc.language.isozh_TWen_US
dc.titleStructure of high power edge emission laser diodezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07577175zh_TW
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