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DC FieldValueLanguage
dc.contributor.authorChangen_US
dc.contributor.authorEdward Yien_US
dc.contributor.authorChangen_US
dc.contributor.authorShang-Wenen_US
dc.contributor.authorLeeen_US
dc.contributor.authorCheng-Shihen_US
dc.date.accessioned2014-12-16T06:14:29Z-
dc.date.available2014-12-16T06:14:29Z-
dc.date.issued2008-09-02en_US
dc.identifier.govdocH01L023/48zh_TW
dc.identifier.govdocH01L029/40zh_TW
dc.identifier.govdocH01L021/02zh_TW
dc.identifier.govdocH01L023/52zh_TW
dc.identifier.govdocH01L029/66zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104763-
dc.description.abstractThe present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.zh_TW
dc.language.isozh_TWen_US
dc.titleCu-metalized compound semiconductor devicezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07420227zh_TW
Appears in Collections:Patents


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