完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ker | en_US |
dc.contributor.author | Ming-Dou | en_US |
dc.contributor.author | Hsu | en_US |
dc.contributor.author | Kuo-Chun | en_US |
dc.date.accessioned | 2014-12-16T06:14:34Z | - |
dc.date.available | 2014-12-16T06:14:34Z | - |
dc.date.issued | 2006-07-04 | en_US |
dc.identifier.govdoc | H01L029/66 | zh_TW |
dc.identifier.govdoc | H01L029/06 | zh_TW |
dc.identifier.govdoc | H01L023/62 | zh_TW |
dc.identifier.govdoc | H01L027/085 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104810 | - |
dc.description.abstract | A double-triggered silicon controller rectifier (SCR) comprises a plurality of N+ diffusion areas, a plurality of P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 07071528 | zh_TW |
顯示於類別: | 專利資料 |