Ferroelectric memory structure and fabrication method thereof

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DC 欄位	值	語言
dc.contributor.author	Tseng	en_US
dc.contributor.author	Tseung-Yuen	en_US
dc.contributor.author	Lee	en_US
dc.contributor.author	Shean Yiah	en_US
dc.date.accessioned	2014-12-16T06:14:35Z	-
dc.date.available	2014-12-16T06:14:35Z	-
dc.date.issued	2006-03-21	en_US
dc.identifier.govdoc	H01L029/76	zh_TW
dc.identifier.govdoc	H01L021/02	zh_TW
dc.identifier.govdoc	H01L027/108	zh_TW
dc.identifier.govdoc	H01L029/94	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104821	-
dc.description.abstract	A ferroelectric memory structure is disclosed. The ferroelectric memory structure includes a substrate, an insulating layer formed on the substrate, a plurality of oxide electrodes formed on the insulating layer, a ferroelectric layer formed on the insulating layer and the plurality of oxide electrodes, and a plurality of metallic electrodes formed on the ferroelectric layer and corresponding to the plurality of the oxide electrodes.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Ferroelectric memory structure and fabrication method thereof	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	07015523	zh_TW
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