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dc.contributor.authorHsuen_US
dc.contributor.authorWensyangen_US
dc.contributor.authorChouen_US
dc.contributor.authorHsueh Liangen_US
dc.contributor.authorTienen_US
dc.contributor.authorChung Haoen_US
dc.date.accessioned2014-12-16T06:14:39Z-
dc.date.available2014-12-16T06:14:39Z-
dc.date.issued2004-10-26en_US
dc.identifier.govdocH01J040/14zh_TW
dc.identifier.govdocH01J003/14zh_TW
dc.identifier.govdocH01J005/16zh_TW
dc.identifier.govdocG02B003/02zh_TW
dc.identifier.govdocG02B013/18zh_TW
dc.identifier.govdocG02B003/00zh_TW
dc.identifier.govdocG02B007/00zh_TW
dc.identifier.govdocG02B009/00zh_TW
dc.identifier.govdocG02B011/00zh_TW
dc.identifier.govdocG02B013/00zh_TW
dc.identifier.govdocG02B015/00zh_TW
dc.identifier.govdocG02B017/00zh_TW
dc.identifier.govdocG02B025/00zh_TW
dc.identifier.govdocG11B007/00zh_TW
dc.identifier.govdocG11B007/135zh_TW
dc.identifier.govdocG11B011/00zh_TW
dc.identifier.govdocG03F001/00zh_TW
dc.identifier.govdocG03F007/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104840-
dc.description.abstractThe invention relates to an integrated method for manufacturing a combined solid immersion lens (SIL) and submicron aperture, and device thereof, comprising depositing a sacrificial layer on a substrate, coating a photoresist on the sacrificial layer and using photo-lithography to form an aperture on the photoresist, applying reflow and etching process to remove the sacrificial layer below the aperture, depositing a conductive material on the photoresist and performing electroplating to reduce the aperture size, then coating another photoresist and using photo-lithography to form a cylindrical phtoresist above the aperture, applying a high temperature thermal reflow to form a microlens, and finally removing the substrate to obtain an optical read/write apparatus with a combined solid immersion lens (SIL) and submicron aperture.zh_TW
dc.language.isozh_TWen_US
dc.titleMethod for manufacturing a combined solid immersion lens (SIL) and submicron aperture, and device thereofzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber06809886zh_TW
Appears in Collections:Patents


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