Schottky structure in GaAs semiconductor device

標題:	Schottky structure in GaAs semiconductor device
作者:	Lee Cheng-Shih Chang Yi
公開日期:	7-九月-2004
摘要:	The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.
官方說明文件#:	H01L023/48 H01L023/52 H01L029/47 H01L029/40
URI:	http://hdl.handle.net/11536/104841
專利國:	USA
專利號碼:	06787910
顯示於類別：	專利資料

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。