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dc.contributor.authorSHIEH Han-Ping D.en_US
dc.contributor.authorLIU Po-Tsunen_US
dc.contributor.authorTSAI Yun-Chuen_US
dc.contributor.authorTSAI Min-Yenen_US
dc.contributor.authorTENG Li-Fengen_US
dc.date.accessioned2014-12-16T06:14:40Z-
dc.date.available2014-12-16T06:14:40Z-
dc.date.issued2014-12-11en_US
dc.identifier.govdocH01L029/786zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104849-
dc.description.abstractA thin film transistor comprises a transparent substrate, a gate is disposed on the transparent substrate, a gate insulator is disposed on the gate and the transparent substrate, an active layer is disposed on the gate insulator, an electrode layer is electrically connected the active layer and the portion of the active layer is exposed, and an ultraviolet light absorbing layer is disposed on the electrode layer. By using the advantage of the ultraviolet light absorbing layer with the range of visible light transmittance and with the component protection, preventing the optical characteristics of the thin film transistor from the outside moisture is achieved, and by adjusting the parameters in the thin film deposition process to change its conductivity.zh_TW
dc.language.isozh_TWen_US
dc.titleThin film Transistor with UV light Absorber Layerzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20140361287zh_TW
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