標題: | METHOD FOR MANUFACTURING SELF-ALIGNED THIN-FILM TRANSISTOR AND STRUCTURE THEREOF |
作者: | Chou, Cheng Wei Zan, Hsiao Wen Tsai, Chuang Chuang |
公開日期: | 6-一月-2011 |
摘要: | A method for manufacturing a self-aligned thin-film transistor (TFT) is described. Firstly, an oxide gate, a dielectric layer, and a photoresist layer are deposited on a first surface of a transparent substrate in sequence. Then, an ultraviolet light is irradiated on a second surface of the substrate opposite to the first surface to expose the photoresist layer, in which a gate manufactured by the oxide gate serves as a mask, and absorbs the ultraviolet light irradiated on the photoresist layer corresponding to the oxide gate. Then, the exposed photoresist layer is removed, and a transparent conductive layer is deposited on the unexposed photoresist layer and the dielectric layer. Then, a patterning process is executed on the transparent conductive layer to form a source and a drain, and an active layer is formed to cover the source, the drain, and the dielectric layer, so as to finish a self-aligned TFT structure. |
官方說明文件#: | H01L029/786 H01L021/34 |
URI: | http://hdl.handle.net/11536/105346 |
專利國: | USA |
專利號碼: | 20110001135 |
顯示於類別: | 專利資料 |