標題: | Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers |
作者: | Tu, CH Chang, TC Liu, PT Zan, HW Tai, YH Feng, LW Wu, YC Chang, CY 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
公開日期: | 2005 |
摘要: | Polycrystalline silicon thin-film transistors (poly-Si TFTs) with self-aligned fluorine-doped SiO2 (FSG) spacer were investigated in this study. The presence of FSG spacers can effectively reduce the lateral electrical field near the drain side of a poly-Si TFT device, and strongly passivate Si dangling bonds at the grain boundaries. The significant enhancement in electrical performance suppresses serious kink effect and improves electrical reliability of poly-Si TFTs effectively. In addition, the proposed poly-TFT structure is uncomplicated and compatible with existing TFT manufacturing processes. (c) 2005 The Electrochemical Society. |
URI: | http://hdl.handle.net/11536/24403 http://dx.doi.org/10.1149/1.1945372 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.1945372 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 8 |
Issue: | 8 |
起始頁: | G209 |
結束頁: | G211 |
顯示於類別: | 期刊論文 |