標題: | Passivation effect of poly-Si thin-film transistors with fluorine-ion-implanted spacers |
作者: | Chen, Wei-Ren Chang, Ting-Chang Liu, Po-Tsun Wu, Chen Jung Tu, Chun-Hao Sze, S. M. Chang, Chun-Yen 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | fluorine passivation;ion implantation;polycrystalline silicon (poly-Si);spacer;thin-film transistor (TFT) |
公開日期: | 1-六月-2008 |
摘要: | In this letter, polycrystalline silicon thin-film transistors (TFTs) consisting of lightly doped drain structure and fluorine-ion-implanted spacers were investigated for the passivation effect under the hot carrier stress. The dose and distribution of fluorine are exhibited by secondary ion mass spectrometry analysis. We could use this method to provide enough fluorine atoms to passivate the defects between the N- regime and the conduction channel. Moreover, the TFTs with fluorine-ion-implanted spacers have better electrical characteristics than the standard device for resisting the degradation effects of hot carrier, such as smaller degradation of transconductance, current crowding effect, and subthreshold slope. |
URI: | http://dx.doi.org/10.1109/LED.2008.922550 http://hdl.handle.net/11536/8776 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2008.922550 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 29 |
Issue: | 6 |
起始頁: | 603 |
結束頁: | 605 |
顯示於類別: | 期刊論文 |