標題: | Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors |
作者: | Feng, Li-Wei Chang, Ting-Chang Liu, Po-Tsun Tu, Chun-Hao Wu, Yung-Chun Yang, Che-Yu Chang, Chun-Yen 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | Fluorine doped oxide (SiOF);Poly-Si;Thin film transistor (TFT);Lightly doped drain (LDD);Direct current (DC) stress |
公開日期: | 1-十二月-2008 |
摘要: | The novel process of self-aligned fluorine doped oxide (SiOF) spacers on low temperature poly-Si (LTPS) lightly doped drain (LDD) thin film transistors (TFTs) is proposed. A fluorine doped oxide spacers were provided to generate the lower dissociation Si-F bonds adjusted to the interface of the drain which is the largest lateral electric field region for lightly doped drain structure. The stronger Si-F bonds can reduce the bonds broken by impact ionization. It is found that the output characteristics of SiOF spacers TFTs show the superior immunity to kink effect. The degradations in Vth shifting, subthreshold slope, drain current and transconductance of SiOF spacers after DC stress are improved. (C) 2008 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2008.04.106 http://hdl.handle.net/11536/8118 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2008.04.106 |
期刊: | THIN SOLID FILMS |
Volume: | 517 |
Issue: | 3 |
起始頁: | 1204 |
結束頁: | 1208 |
顯示於類別: | 期刊論文 |