完整後設資料紀錄
DC 欄位語言
dc.contributor.authorFeng, Li-Weien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorWu, Yung-Chunen_US
dc.contributor.authorYang, Che-Yuen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:10:37Z-
dc.date.available2014-12-08T15:10:37Z-
dc.date.issued2008-12-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2008.04.106en_US
dc.identifier.urihttp://hdl.handle.net/11536/8118-
dc.description.abstractThe novel process of self-aligned fluorine doped oxide (SiOF) spacers on low temperature poly-Si (LTPS) lightly doped drain (LDD) thin film transistors (TFTs) is proposed. A fluorine doped oxide spacers were provided to generate the lower dissociation Si-F bonds adjusted to the interface of the drain which is the largest lateral electric field region for lightly doped drain structure. The stronger Si-F bonds can reduce the bonds broken by impact ionization. It is found that the output characteristics of SiOF spacers TFTs show the superior immunity to kink effect. The degradations in Vth shifting, subthreshold slope, drain current and transconductance of SiOF spacers after DC stress are improved. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectFluorine doped oxide (SiOF)en_US
dc.subjectPoly-Sien_US
dc.subjectThin film transistor (TFT)en_US
dc.subjectLightly doped drain (LDD)en_US
dc.subjectDirect current (DC) stressen_US
dc.titleApplication of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2008.04.106en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume517en_US
dc.citation.issue3en_US
dc.citation.spage1204en_US
dc.citation.epage1208en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000262053800040-
dc.citation.woscount0-
顯示於類別:期刊論文


文件中的檔案:

  1. 000262053800040.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。