Passivation effect of poly-Si thin-film transistors with fluorine-ion-implanted spacers

Abstract

In this letter, polycrystalline silicon thin-film transistors (TFTs) consisting of lightly doped drain structure and fluorine-ion-implanted spacers were investigated for the passivation effect under the hot carrier stress. The dose and distribution of fluorine are exhibited by secondary ion mass spectrometry analysis. We could use this method to provide enough fluorine atoms to passivate the defects between the N- regime and the conduction channel. Moreover, the TFTs with fluorine-ion-implanted spacers have better electrical characteristics than the standard device for resisting the degradation effects of hot carrier, such as smaller degradation of transconductance, current crowding effect, and subthreshold slope.