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dc.contributor.authorLIN HORNG-CHIHen_US
dc.contributor.authorLYU RONG-JHEen_US
dc.date.accessioned2014-12-16T06:14:40Z-
dc.date.available2014-12-16T06:14:40Z-
dc.date.issued2014-12-04en_US
dc.identifier.govdocH01L029/66zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104850-
dc.description.abstractA method for fabricating a thin-film transistor is disclosed. Firstly, a patterned dielectric mask structure with a bottom thereof having a gate dielectric layer is formed on a gate-stacked structure so that the gate dielectric layer covers a gate of the gate-stacked structure. Top surface of the patterned dielectric mask structure has at least two openings. A semiconductor layer is formed on the gate-stacked structure via the openings by a sputtering method. The semiconductor layer comprises a channel above the gate, a source and a drain below the openings. The channel has a thickness which sequentially decreases from edge to center.zh_TW
dc.language.isozh_TWen_US
dc.titleMETHOD FOR FABRICATING THIN-FILM TRANSISTORzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20140357017zh_TW
Appears in Collections:Patents


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