Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | LIN HORNG-CHIH | en_US |
dc.contributor.author | LYU RONG-JHE | en_US |
dc.date.accessioned | 2014-12-16T06:14:40Z | - |
dc.date.available | 2014-12-16T06:14:40Z | - |
dc.date.issued | 2014-12-04 | en_US |
dc.identifier.govdoc | H01L029/66 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104850 | - |
dc.description.abstract | A method for fabricating a thin-film transistor is disclosed. Firstly, a patterned dielectric mask structure with a bottom thereof having a gate dielectric layer is formed on a gate-stacked structure so that the gate dielectric layer covers a gate of the gate-stacked structure. Top surface of the patterned dielectric mask structure has at least two openings. A semiconductor layer is formed on the gate-stacked structure via the openings by a sputtering method. The semiconductor layer comprises a channel above the gate, a source and a drain below the openings. The channel has a thickness which sequentially decreases from edge to center. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | METHOD FOR FABRICATING THIN-FILM TRANSISTOR | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20140357017 | zh_TW |
Appears in Collections: | Patents |
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