標題: Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method
作者: Wu, Ming-Hung
Lin, Horng-Chih
Li, Pei-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Source/drain series resistance;thin-film transistor (TFT);tin monoxide (SnO)
公開日期: 1-四月-2019
摘要: We reported the fabrication of submicrometer p-type tin monoxide (SnO) thin-film transistors (TFTs) with a channel length of 0.2 mu m for back-end-of-line applications using a film profile engineering (FPE) approach. Material analyses indicate that the as-deposited SnO films are amorphous, while be transformed to polycrystalline after a thermal annealing in oxygen ambient. Fabricated p-type SnO FPE-TFTs of a channel length of 0.2 mu m were manifested with ON/OFF current ratio higher than 105 and subthreshold slope of 320 mV/decade, superior to the data of submicrometer SnO devices ever reported. The extracted field-effect mobility is about 0.25 cm(2)/V.s. After ruling out the influence of source/drain series resistance, the intrinsic field-effect mobility is found to be about 1 cm(2)/V.s.
URI: http://dx.doi.org/10.1109/TED.2019.2897813
http://hdl.handle.net/11536/151596
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2897813
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 66
Issue: 4
起始頁: 1766
結束頁: 1771
顯示於類別:期刊論文