Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method

Abstract

We reported the fabrication of submicrometer p-type tin monoxide (SnO) thin-film transistors (TFTs) with a channel length of 0.2 mu m for back-end-of-line applications using a film profile engineering (FPE) approach. Material analyses indicate that the as-deposited SnO films are amorphous, while be transformed to polycrystalline after a thermal annealing in oxygen ambient. Fabricated p-type SnO FPE-TFTs of a channel length of 0.2 mu m were manifested with ON/OFF current ratio higher than 105 and subthreshold slope of 320 mV/decade, superior to the data of submicrometer SnO devices ever reported. The extracted field-effect mobility is about 0.25 cm(2)/V.s. After ruling out the influence of source/drain series resistance, the intrinsic field-effect mobility is found to be about 1 cm(2)/V.s.