Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHUANG Ching-Te | en_US |
dc.contributor.author | YANG Hao-I | en_US |
dc.contributor.author | LU Chien-Yu | en_US |
dc.contributor.author | CHEN Chien-Hen | en_US |
dc.contributor.author | CHANG Chi-Shin | en_US |
dc.contributor.author | HUANG Po-Tsang | en_US |
dc.contributor.author | LAI Shu-Lin | en_US |
dc.contributor.author | HWANG Wei | en_US |
dc.contributor.author | JOU Shyh-Jye | en_US |
dc.contributor.author | TU Ming-Hsien | en_US |
dc.date.accessioned | 2014-12-16T06:14:49Z | - |
dc.date.available | 2014-12-16T06:14:49Z | - |
dc.date.issued | 2014-03-20 | en_US |
dc.identifier.govdoc | G11C007/02 | zh_TW |
dc.identifier.govdoc | G11C011/00 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104938 | - |
dc.description.abstract | A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | STATIC RANDOM ACCESS MEMORY WITH RIPPLE BIT LINES/SEARCH LINES FOR IMROVING CURRENT LEAKAGE/VARIATION TOLERANCE AND DENSITY/PERFORMANCE | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20140078818 | zh_TW |
Appears in Collections: | Patents |
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