CARBON-DOPED SILICON NITRIDE THIN FILM AND MANUFACTURING METHOD AND DEVICE THEREOF

Abstract

The present invention relates to carbon-doped silicon nitride thin film and forming method and device thereof The carbon-doped silicon nitride thin film is prepared by using a precursor having at least one of bis(dimethylamino)diethylsilane, N,N-Dimethyltrimethylsilylamine and a cyclic structure with a N—Si bond. The method for forming a carbon-doped silicon nitride thin film includes: providing a precursor having at least one of bis(dimethylamino)diethylsilane, N,N-Dimethyltrimethylsilylamine and a cyclic structure with a N—Si bond to form the carbon-doped silicon nitride thin film. The device for forming the carbon-doped silicon nitride thin film includes a reactor and a container with the aforementioned precursor coupled to the reactor.