完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCHEN Tsung-Linen_US
dc.contributor.authorCHANG Edward Yien_US
dc.contributor.authorCHIENG Wei-Huaen_US
dc.contributor.authorCHENG Stoneen_US
dc.contributor.authorJENG Shyr-Longen_US
dc.contributor.authorHUANG Shin-Weien_US
dc.date.accessioned2014-12-16T06:14:55Z-
dc.date.available2014-12-16T06:14:55Z-
dc.date.issued2013-09-19en_US
dc.identifier.govdocH03K003/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104995-
dc.description.abstractThe present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The source and the drain of the first transistor couple with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited. When the current of the gate of the GaN transistor exceeds the predetermined value, the breakdown voltage is increased by limiting the gate current.zh_TW
dc.language.isozh_TWen_US
dc.titleCurrent limit circuit apparatuszh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20130241603zh_TW
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