完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCHEN Tsung-Linen_US
dc.contributor.authorCHANG Edward Yien_US
dc.contributor.authorCHIENG Wei-Huaen_US
dc.contributor.authorCHENG Stoneen_US
dc.contributor.authorJENG Shyr-Longen_US
dc.contributor.authorCHANG Che-Weien_US
dc.date.accessioned2014-12-16T06:14:55Z-
dc.date.available2014-12-16T06:14:55Z-
dc.date.issued2013-09-19en_US
dc.identifier.govdocH03K003/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104996-
dc.description.abstractThe present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source.zh_TW
dc.language.isozh_TWen_US
dc.titleHigh-side driver circuitzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20130241601zh_TW
顯示於類別:專利資料


文件中的檔案:

  1. 20130241601.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。