SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

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DC 欄位	值	語言
dc.contributor.author	Chang Edward Yi.	en_US
dc.contributor.author	Lin Yueh-Chin	en_US
dc.contributor.author	Chang Chia-Hua	en_US
dc.contributor.author	Trinh Hai-Dang	en_US
dc.date.accessioned	2014-12-16T06:14:58Z	-
dc.date.available	2014-12-16T06:14:58Z	-
dc.date.issued	2013-06-20	en_US
dc.identifier.govdoc	H01L029/12	zh_TW
dc.identifier.govdoc	H01L021/02	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105036	-
dc.description.abstract	The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a III-V semiconductor layer; an aluminum oxide layer formed on the III-V semiconductor layer; and a lanthanide oxide layer formed on the aluminum oxide layer. The method of manufacturing a semiconductor device includes: forming an aluminum oxide layer between a III-V semiconductor layer and a lanthanide oxide layer so as to prevent an inter-reaction of atoms between the III-V semiconductor layer and the lanthanide oxide layer.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20130153886	zh_TW
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