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dc.contributor.authorLU Tien-Changen_US
dc.contributor.authorHuang Huei-Minen_US
dc.contributor.authorKuo Hao-Chungen_US
dc.contributor.authorWang Shing-Chungen_US
dc.date.accessioned2014-12-16T06:14:58Z-
dc.date.available2014-12-16T06:14:58Z-
dc.date.issued2013-06-13en_US
dc.identifier.govdocH01L029/16zh_TW
dc.identifier.govdocH01L029/20zh_TW
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105037-
dc.description.abstractA method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.zh_TW
dc.language.isozh_TWen_US
dc.titleSEMICONDUCTOR OPTICAL DEVICE HAVING AN AIR MEDIA LAYER AND THE METHOD FOR FORMING THE AIR MEDIA LAYER THEREOFzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20130146896zh_TW
Appears in Collections:Patents


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